 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5216 Q-Band 4-Stage Driver Amplifier DESCRIPTION The MGFC5216 is a GaAs MMIC chip especially designed for 37.0 ~ 40.0 GHz band Middle Power Amplifier (MPA) . BLOCK DIAGRAM Vg1 Vg2 Vg3 Vg4 OUT FEATURES RF frequency : 37.0 to 43.0 GHz Linear gain : 20dB (TYP.)@ 37 to 40 GHz 20 dB(TYP.) @ 40 to 43 GHz P1dB : 16 dBm(min.) @ 37 to 40 GHz 16 dBm(target) @ 40 to 43 GHz IN Vd1 Vd2 Vd3 Vd4 TARGET SPECIFICATIONS (Ta=25C) Parameter Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size Specification Frequeny Linear Gain P1dB Input VSWR Output VSWR Vd Vg Chip Size (16) 2.4 3.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 V V mm2 16 2.2 2.0 Vd12=4.5, Vd34=6 -0.3 1.99x0.83 Typical V V mm2 Max. 43 20 Unit GHz dB dBm Min. 37 20 Typical Max. 40 Unit GHz dB dBm PHOTOGRAPH Min. 40 ( ):Design Target (Now Evaluating) MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5216 Q-Band 4-Stage Driver Amplifier DIE SIZE AND BOND PAD LOCATION(UNIT : M) X=1.99 mm Y=0.83 mm Bond Pad Dimension=0.07 x 0.15 mm2 (RF) 0.1 x 0.1 mm2 (DC) (630.0, 700.0) (1395.0, 700.0) (270.0, 700.0) (990.0, 700.0) (115.0, 445.0) RFin RFout (1875.0, 445.0) (1695.0, 130.0) (965.0, 130.0) (165.0, 125.5) (515.0, 130.0) (1350.0, 130.0) Vg1 Vg2 Vg3 Vg4 RFin RFout GND Vd1 Vd2 Vd3 Vd4 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5216 Q-Band 4-Stage Driver Amplifier TYPICAL CHARACTERISTICS S-Parameter vs. Frequency 30 20 10 0 -10 -20 -30 30 35 40 45 50 Frequency (GHz) S22 S11 GAIN Id12=85mA Id34=125mA Measured Output Power Performances 20 f=40GHz Measured 15 25 30 10 20 5 -15 -10 -5 Pin (dBm) 0 5 15 MITSUBISHI ELECTRIC as of July '98 PRELIMINARY Notice : This is not a final specification Some parametric limits are subject to change. MITSUBISHI SEMICONDUCTOR MGFC5216 Q-Band 4-Stage Driver Amplifier AN EXAMPLE OF TEST CIRCUIT Vg2 Vg1 Vg4 Vg3 Vg1 Vg2 Vg3 Vg4 RFout RFin Vd1 Vd2 Vd3 GND Vd4 Vd3 Vd4 Vd1 Vd2 : Chip Capasitor ( 39 - 100 pF ) MITSUBISHI ELECTRIC as of July '98 |
Price & Availability of MGFC5216
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |